N Neeraja¹, P V K Chaitanya² and K C B Rao^3
1,¹G V P College of Engineering for Women and ³University College of Engineering, India

In this paper, we demonstrate an approach to design FET (pHEMT) based amplifier. The FET is from Berex Inc.The design is carried out using the measured S-parameter data of the FET.ADS is used as design tool for the design. A single-stage power amplifier demonstrated 13dB output gain from 3GHz-4GHz .The saturated output power of 1W and the power added efficiency (PAE) up to 43%.The amplifier is fabricated on a selective device GaAs power pHEMT process in MIC (Microwave Integrated Circuit) Technology. MICs are realized using one or more different forms of transmission lines, all characterized by their ability to be printed on a dielectric substrate.Active and passive components such as transistors/FET, thin or thick film chip capacitors and resistors are attached.

pHEMT, MIC, Power Amplifier